THE DIFFUSION OF MN IN CDTE

被引:17
|
作者
JAMIL, NY [1 ]
SHAW, D [1 ]
机构
[1] UNIV HULL,DEPT APPL PHYS,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND
关键词
D O I
10.1088/0268-1242/10/7/009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The diffusivity of Mn in CdTe, D(Mn), has been measured between 500 and 800 degrees C under saturated Cd and Te conditions. The variation of D(Mn) with Cd partial pressure was measured at 600 degrees C. Between 500 and 800 degrees C D(Mn) = (22.5(divided by)(x)3.30) exp[(-(2.35 +/- 0.09) eV/kT)] cm(2) s(-1) for saturated Te, and between 600 and 800 degrees C for saturated Cd D(Mn) = (1.12(divided by)(x)9.12) x 10(3) exp(-(2.76 +/- 0.18)eV/kT) cm(2) s(-1). These results are consistent with those at 600 degrees C which show D(Mn) to increase with decreasing Cd partial pressure. It is argued that the observed features of D(Mn) can be best accounted for in terms of a V-Cd('') diffusion mechanism.
引用
收藏
页码:952 / 958
页数:7
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