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STRUCTURE OF VACUUM EVAPORATED GE FILMS ON GAAS SUBSTRATES
被引:2
作者
:
RYBKA, V
论文数:
0
引用数:
0
h-index:
0
RYBKA, V
DUDROVA, E
论文数:
0
引用数:
0
h-index:
0
DUDROVA, E
SEVCIK, Z
论文数:
0
引用数:
0
h-index:
0
SEVCIK, Z
KREJCI, P
论文数:
0
引用数:
0
h-index:
0
KREJCI, P
机构
:
来源
:
THIN SOLID FILMS
|
1971年
/ 8卷
/ 01期
关键词
:
D O I
:
10.1016/0040-6090(71)90102-7
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:R7 / &
相关论文
共 4 条
[1]
EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION
[J].
KRIKORIAN, E
论文数:
0
引用数:
0
h-index:
0
KRIKORIAN, E
;
SNEED, RJ
论文数:
0
引用数:
0
h-index:
0
SNEED, RJ
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(10)
:3665
-+
[2]
RYBKA V, 1970, INT C PHYSICS CHEMIS
[3]
FORMATION CONDITIONS AND STRUCTURE OF GE FILMS DEPOSITED ON POLISHED 111 CAF2 SUBSTRATES INAN ULTRAHIGH-VACUUM SYSTEM
[J].
SLOOPE, BW
论文数:
0
引用数:
0
h-index:
0
SLOOPE, BW
;
TILLER, CO
论文数:
0
引用数:
0
h-index:
0
TILLER, CO
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3174
-&
[4]
NUCLEATION OF VAPOR DEPOSITS
[J].
WALTON, D
论文数:
0
引用数:
0
h-index:
0
WALTON, D
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(10)
:2182
-&
←
1
→
共 4 条
[1]
EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION
[J].
KRIKORIAN, E
论文数:
0
引用数:
0
h-index:
0
KRIKORIAN, E
;
SNEED, RJ
论文数:
0
引用数:
0
h-index:
0
SNEED, RJ
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(10)
:3665
-+
[2]
RYBKA V, 1970, INT C PHYSICS CHEMIS
[3]
FORMATION CONDITIONS AND STRUCTURE OF GE FILMS DEPOSITED ON POLISHED 111 CAF2 SUBSTRATES INAN ULTRAHIGH-VACUUM SYSTEM
[J].
SLOOPE, BW
论文数:
0
引用数:
0
h-index:
0
SLOOPE, BW
;
TILLER, CO
论文数:
0
引用数:
0
h-index:
0
TILLER, CO
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3174
-&
[4]
NUCLEATION OF VAPOR DEPOSITS
[J].
WALTON, D
论文数:
0
引用数:
0
h-index:
0
WALTON, D
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(10)
:2182
-&
←
1
→