DIFFERENTIATION OF THE NON RADIATIVE RECOMBINATION PROPERTIES OF THE 2 INTERFACES OF MBE GROWN GAAS-GAALAS QUANTUM-WELLS

被引：5
|
作者：
GERARD, JM
SERMAGE, B
BERGOMI, L
MARZIN, JY
机构：
[1] Centre National d'Etudes des Télécommunications, 92220 Bagneux
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1016/0749-6036(90)90342-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The repartition of non radiative recombination centers density in a quantum well has been tested by time resolved luminescence in samples containing an Indium plane inside a 16 nm wide GaAs well in Ga0.7Al0.3As. The results show unambigously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime (τnr) vary between 4 ns when the Indium plane is close to the inverted interface and 8 ns when the Indium plane is close to the direct one. © 1990.
引用
收藏
页码：417 / 419
页数：3
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