EXPERIMENTAL-STUDY OF MICROWAVE REFLECTION GAIN OF ALAS GAAS ALAS QUANTUM WELL STRUCTURES

被引：5

作者：

STAPLETON, SP ^{[1
]}

DEEN, MJ ^{[1
]}

BEROLO, E ^{[1
]}

HARDY, RHS ^{[1
]}

机构：

[1] COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 02期

关键词：

Microwave devices and components; Semiconductor devices and materials; Tunnel diodes; Tunnelling;

D O I：

10.1049/el:19900056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on microwave reflection gain measurements on single quantum well AIAs/GaAs/AIAs resonant tunnelling structures. Reflection gain against frequency measurements in the 0.050-26.5GHz range were performed. The equivalent negative high-frequency resistance and capacitance as a function of frequency were determined for a diode of area 49μm2. The point at which the reflection gain exceeds unity (0dB) is noted to be the onset of possible oscillations, and thus yields a negative resistance. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：84 / 85

页数：2

共 10 条

[1] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].