IMPLANTS OF 15-50-MEV BORON IONS INTO SILICON

被引:17
|
作者
LAFERLA, A
DIFRANCO, A
RIMINI, E
CIAVOLA, G
FERLA, G
机构
[1] LAB NAZL SUD,CATANIA,ITALY
[2] SGS THOMSON MICROELECTRON,I-95100 CATANIA,ITALY
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期
关键词
D O I
10.1016/0921-5107(89)90078-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:69 / 73
页数:5
相关论文
共 50 条
  • [41] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
    FLADDA, G
    BJORKQVIST, K
    ERIKSSON, L
    SIGURD, D
    APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +
  • [42] DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS
    POPOK, V
    HNATOWICZ, V
    KVITEK, J
    SVORCIK, V
    RYBKA, V
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 141 (01): : 93 - 98
  • [43] LATERAL SPREAD OF BORON IONS IMPLANTED IN SILICON
    AKASAKA, Y
    KAWAZU, S
    HORIE, K
    APPLIED PHYSICS LETTERS, 1972, 21 (04) : 128 - &
  • [44] Stopping characteristics of boron and indium ions in silicon
    D. S. Veselov
    Yu. A. Voronov
    Physics of Atomic Nuclei, 2016, 79 : 1678 - 1681
  • [45] Stopping power for MeV energy Au ions in silicon
    Zhai, YJ
    Lu, XT
    Zheng, T
    Xia, ZH
    Shen, DY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 128 - 131
  • [46] TRANSVERSE STRAGGLING OF MEV OXYGEN IONS IMPLANTED IN SILICON
    GROB, JJ
    GROB, A
    THEVENIN, P
    SIFFERT, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 30 (01): : 34 - 37
  • [47] PARAMAGNETIC DEFECTS IN SILICON IRRADIATED WITH 40 MEV AS IONS
    DVURECHENSKII, AV
    KARANOVICH, AA
    RYBIN, AV
    GROTZSCHEL, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 620 - 623
  • [48] Stopping power for MeV energy Au ions in silicon
    Peking Univ, Beijing, China
    Nucl Instrum Methods Phys Res Sect B, 1-4 (128-131):
  • [49] DYNAMICS OF LATTICE DAMAGE ACCUMULATION FOR MEV IONS IN SILICON
    GOLANSKI, A
    GROB, A
    GROB, JJ
    HOLLAND, OW
    PENNYCOOK, SJ
    WHITE, CW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (03): : 365 - 371
  • [50] COMPARISON OF PHOSPHORUS, ARSENIC AND BORON IMPLANTS INTO BULK SILICON AND SOS
    AMBERIADIS, K
    KUMP, MR
    MAGEE, CW
    SOLID-STATE ELECTRONICS, 1990, 33 (06) : 651 - 654