COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS

被引:491
作者
PLISKIN, WA [1 ]
机构
[1] IBM CORP, DIV SYST PROD, E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 05期
关键词
D O I
10.1116/1.569413
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1064 / 1081
页数:18
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共 154 条
[2]  
AHN J, 1970, IBM TECH DISCL B, V13, P1798
[3]   LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS [J].
ALT, LL ;
ING, SW ;
LAENDLE, KW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :465-465
[4]   SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J].
ANDERSON, GS ;
MAYER, WN ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2991-&
[5]   NEW METHOD FOR CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE [J].
AVIGAL, Y ;
BEINGLAS.I ;
SCHIEBER, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1103-1107
[6]   ELECTRICAL CHARACTERISTICS OF MOS STRUCTURES ON LESS THAN 111 GREATER THAN AND LESS THAN 100 GREATER THAN ORIENTED N-TYPE SILICON AS INFLUENCED BY USE OF HYDROGEN-CHLORIDE DURING THERMAL OXIDATION [J].
BACCARANI, G ;
SEVERI, M ;
SONCINI, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1436-1438
[7]   HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].
BECKMANN, KH ;
HARRICK, NJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&
[8]  
BJORCK E, 1963, VIDE, V19, P262
[9]  
BORN M, 1965, PRINCIPLES OPTICS, P87
[10]   PROPERTIES OF SIXOYNZ FILMS ON SI [J].
BROWN, DM ;
GRAY, PV ;
HEUMANN, FK ;
PHILIPP, HR ;
TAFT, EA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&