THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT COBALT CENTERS IN SILICON

被引：20
作者：
YAU, LD
CHAN, WW
SAH, CT
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 02期
关键词：
D O I：
10.1002/pssa.2210140234
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：655 / 662
页数：8
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