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SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
被引:84
作者
:
BLEICHER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY
TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY
BLEICHER, M
[
1
]
LANGE, E
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY
TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY
LANGE, E
[
1
]
机构
:
[1]
TECH UNIV MUNICH, INST TECH ELEKTR, MUNICH 8, WEST GERMANY
来源
:
SOLID-STATE ELECTRONICS
|
1973年
/ 16卷
/ 03期
关键词
:
D O I
:
10.1016/0038-1101(73)90012-9
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:375 / 380
页数:6
相关论文
共 10 条
[1]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
[J].
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
;
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
:837
-+
[2]
TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
[J].
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
;
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(04)
:503
-+
[3]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:329
-&
[4]
SAH CT, 1967, PR INST ELECTR ELECT, V55, P654
[5]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
;
ROSIER, LL
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0
引用数:
0
h-index:
0
ROSIER, LL
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:759
-+
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
[J].
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1968,
11
(03)
:323
-+
[7]
CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
[J].
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
;
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
:4581
-+
[8]
CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
[J].
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
;
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
:3723
-+
[9]
DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE
[J].
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, R
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3411
-&
[10]
A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
[J].
ZOHTA, Y
论文数:
0
引用数:
0
h-index:
0
ZOHTA, Y
.
APPLIED PHYSICS LETTERS,
1970,
17
(07)
:284
-&
←
1
→
共 10 条
[1]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
[J].
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
;
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
:837
-+
[2]
TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
[J].
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
;
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(04)
:503
-+
[3]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
:329
-&
[4]
SAH CT, 1967, PR INST ELECTR ELECT, V55, P654
[5]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
;
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:759
-+
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
[J].
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1968,
11
(03)
:323
-+
[7]
CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS
[J].
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
;
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
:4581
-+
[8]
CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
[J].
SENECHAL, RR
论文数:
0
引用数:
0
h-index:
0
SENECHAL, RR
;
BASINSKI, J
论文数:
0
引用数:
0
h-index:
0
BASINSKI, J
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
:3723
-+
[9]
DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE
[J].
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, R
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
:3411
-&
[10]
A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS
[J].
ZOHTA, Y
论文数:
0
引用数:
0
h-index:
0
ZOHTA, Y
.
APPLIED PHYSICS LETTERS,
1970,
17
(07)
:284
-&
←
1
→