EFFECTS OF ELECTRON-BEAM-INDUCED DAMAGE ON LEAKAGE CURRENTS IN BACK-GATED GAAS/ALGAAS DEVICES

被引：13

作者：

DAS, B ^{[1
]}

SUBRAMANIAM, S ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of electron-beam-induced damage on the leakage current between a back gate and an ohmic contact in a GaAs/AlGaAs modulation-doped heterostructure grown on a conducting substrate was investigated. Enhanced leakage currents were observed for certain values of the electron-beam energy. The experimental data are shown to be in qualitative agreement with the theory of Gruen, and device implications of this damage. pertaining to back-gating, are discussed.

引用

页码：1347 / 1351

页数：5

共 19 条

[1]

Bethe H., 1933, HDB PHYS, V24, P273

[2]

BIRKHOFF RD, 1958, HDB PHYSIK, V34, P53

[3] SINGLE-PARTICLE AND TRANSPORT SCATTERING TIMES IN A BACK-GATED GAAS/ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURE [J].