GALLIUM-ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION-IMPLANTATION

被引：3

作者：

ANDERSON, WT

DIETRICH, HB

SWIGGARD, EW

LEE, SH

BARK, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3175 / 3177

页数：3

共 8 条

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DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[3]

MILLS TG, 1979, Patent No. 4155784

[4] GAAS PLANAR GUNN DIGITAL DEVICES BY SULFUR-ION-IMPLANTATION [J].

MIZUTANI, T ;

KURUMADA, K .

ELECTRONICS LETTERS, 1975, 11 (25-2) :638-639

[5] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES [J].

SUGETA, T ;

YANAI, H ;

SEKIDO, K .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11) :1629-&

[6]

Swiggard E. M., 1979, Gallium Arsenide and Related Compounds 1978, P125

[7]

SWIGGARD EM, 1977, GALLIUM ARSENIDE REL, P23

[8]

TICHAUER LM, 1978, TECHNICAL DIGEST, P294

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