RAMAN SPECTRUM OF SEMICONDUCTING AND METALLIC VO2

被引：151

作者：

SRIVASTAVA, R

CHASE, LL

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 27卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.27.727

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：727 / +

页数：1

共 13 条

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[2] INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE [J].

BARKER, AS ;

VERLEUR, HW ;

GUGGENHEIM, HJ .

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[3]

BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022

[4]

DEVLIN GE, TO BE PUBLISHED

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FILLINGHAM, PJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4823-+

[6] GROWTH AND ELECTRICAL PROPERTIES OF VANADIUM DIOXIDE SINGLE CRYSTALS CONTAINING SELECTED IMPURITY IONS [J].

MACCHESNEY, JB ;

GUGGENHEIM, HJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (02) :225-+

[7] RAMAN STUDY OF SEMICONDUCTOR-METAL TRANSITION IN TI2O3 [J].

MOORADIA.A ;

RACCAH, PM .

PHYSICAL REVIEW B, 1971, 3 (12) :4253-&

[8] PRESENT POSITION OF THEORY AND EXPERIMENT FOR VO2 [J].

PAUL, W .

MATERIALS RESEARCH BULLETIN, 1970, 5 (08) :691-&

[9] RAMAN SPECTRA OF TIO2,MGF2,ZNF2,FEF2,AND MNF2 [J].

PORTO, SPS ;

FLEURY, PA ;

DAMEN, TC .

PHYSICAL REVIEW, 1967, 154 (02) :522-&

[10] PHOTOEMISSION FROM VO2 [J].

POWELL, RJ ;

BERGLUND, CN ;

SPICER, WE .

PHYSICAL REVIEW, 1969, 178 (03) :1410-+

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