COMPUTER-SIMULATION OF BORON-NITRIDE DEPOSITION BY ION-BEAM-ASSISTED EVAPORATION

被引：24

作者：

MOLLER, W ^{[1
]}

BOUCHIER, D ^{[1
]}

BURAT, O ^{[1
]}

STAMBOULI, V ^{[1
]}

机构：

[1] UNIV PARIS 11,INST ELECTR FONDAMENTALE,CNRS,URA 22,F-91405 ORSAY,FRANCE

来源：

SURFACE & COATINGS TECHNOLOGY | 1991年 / 45卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(91)90208-E

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new version of the TRIDYN dynamic binary collision computer simulation code, which allows multispecies irradiation, has been employed to describe the formation of boron nitride films by ion-beam-assisted deposition at nitrogen energies of 125-1000 eV atoms-1 and nitrogen-to-boron flux ratios of up to 2. The results are in excellent agreement with experimental findings at low ion-to-atom flux ratios which render a substoichiometric or nearly stoichiometric nitrogen concentration. In this range the film composition results from purely collisional effects of implantation, sputtering and mixing. At higher nitrogen concentration, additional processes of ion-induced release become effective. These can be introduced into the simulation in order to obtain satisfactory fits also for the highest flux ratios.

引用

页码：73 / 81

页数：9

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