CRYSTALLIZATION AND DIFFUSION IN PROGRESSIVELY ANNEALED A-GE/SIOX SUPERLATTICES

被引：43

作者：

WILLIAMS, GVM ^{[1
]}

BITTAR, A ^{[1
]}

TRODAHL, HJ ^{[1
]}

机构：

[1] DSIR,PHYS & ENGN LAB,LOWER HUTT,NEW ZEALAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.345616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectroscopy is used to investigate the structural changes in isochronally annealed a-Ge/SiOx superlattices. The Ge crystallization temperature is found to be higher in superlattices with thinner Ge layers, which can be interpreted in terms of the retardation of nucleation and growth of Ge microcrystallites near the Ge/SiOx interface. Before and after the Ge layers crystallize there is Si diffusion into the Ge layers. The Si appears to be uniformly distributed throughout the Ge layers.

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页码：1874 / 1878

页数：5

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