LATTICE-SCATTERING OHMIC MOBILITY OF ELECTRONS IN SILICON

被引：25

作者：

COSTATO, M

REGGIANI, L

机构：

来源：

PHYSICA STATUS SOLIDI | 1970年 / 38卷 / 02期

关键词：

D O I：

10.1002/pssb.19700380218

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：665 / &

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