NUCLEATION OF ELECTRON-HOLE DROPLETS AT SWIRL DEFECTS IN SILICON

被引:5
作者
SHIRAKI, Y
NAKASHIMA, H
机构
关键词
D O I
10.1016/0038-1098(78)91032-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1033 / 1035
页数:3
相关论文
共 50 条
  • [31] QUANTUM-CONFINED ELECTRON-HOLE DROPLETS
    KALT, H
    NOTZEL, R
    PLOOG, K
    GIESSEN, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 173 (01): : 389 - 396
  • [32] ELECTRON-HOLE DROPLETS IN METALLIC SI(P)
    PARSONS, RR
    ROSTWOROWSKI, JA
    BERGERSEN, B
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (05): : 780 - 780
  • [33] INVESTIGATIONS OF THE NUCLEATION OF ELECTRON-HOLE DROPS IN SI
    VOISIN, P
    ETIENNE, B
    VOOS, M
    PHYSICAL REVIEW LETTERS, 1979, 42 (08) : 526 - 529
  • [34] NUCLEATION OF PRECIPITATE COLONIES FROM SWIRL DEFECTS IN SILICON
    NES, E
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 33 (01): : K5 - +
  • [35] Enhanced radiative recombination rate for electron-hole droplets in a silicon photonic crystal nanocavity
    Ihara, Toshiyuki
    Takahashi, Yasushi
    Noda, Susumu
    Kanemitsu, Yoshihiko
    PHYSICAL REVIEW B, 2017, 96 (03)
  • [36] ELECTRON-HOLE DROPS IN DOPED SILICON
    ALTUKHOV, PD
    ROGACHEV, AA
    FIZIKA TVERDOGO TELA, 1981, 23 (07): : 1956 - 1964
  • [37] Electron-hole interactions in silicon nanocrystals
    Leung, K
    Whaley, KB
    PHYSICAL REVIEW B, 1997, 56 (12): : 7455 - 7468
  • [38] Electron-hole interactions in silicon nanocrystals
    Leung, K
    Whaley, KB
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 455 - PHYS
  • [39] Electron-hole drops in dislocational silicon
    Drozdov, N
    Fedotov, A
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 392 - 399
  • [40] Electron-hole interactions in silicon nanocrystals
    Leung, K.
    Whaley, K. B.
    Physical Review B: Condensed Matter, 56 (12):