RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES

被引：20
作者：
PERKINS, CW
AUBUCHON, KG
DILL, HG
机构：
来源：
APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 11期
关键词：
D O I：
10.1063/1.1651866
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：385 / +
页数：1
相关论文
共 6 条
[1]   PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].
CHU, TL ;
SZEDON, JR ;
LEE, CH .
SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&
[2]   ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].
DEAL, BE ;
FLEMING, PJ ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&
[3]   RAPID EVALUATION OF C-V PLOTS FOR MOS STRUCTURES [J].
LEHOVEC, K .
SOLID-STATE ELECTRONICS, 1968, 11 (01) :135-&
[4]   RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].
MITCHELL, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+
[5]   EFFECT OF ELECTRON RADIATION ON SILICON NITRIDE INSULATED GATE FIELD EFFECT TRANSISTORS [J].
NEWMAN, PA ;
WEGENER, HAR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :293-&
[6]  
PERKINS CW, 1968, APPL PHYS LETTERS, V11
1