TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION

被引:65
作者
HADDARA, H
CRISTOLOVEANU, S
机构
关键词
D O I
10.1109/T-ED.1987.22933
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:378 / 385
页数:8
相关论文
共 13 条
[1]  
[Anonymous], 1984, Analysis and Simulation of Semiconductor Devices
[2]   HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS AT 77-K [J].
BRACCHITTA, JA ;
HONAN, TL ;
ANDERSON, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1850-1857
[3]   STUDY AND MODELING OF THE DEGRADATION OF SUBMICRON MOSFETS UNDER ELECTRICAL STRESS [J].
CABONTILL, B ;
GHIBAUDO, G .
REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (05) :305-318
[4]  
CABONTILL B, EUROPHYS C H, V9, P156
[5]  
FANG ZH, EUROPHYS C H, V9, P75
[6]   NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].
GREENFIELD, JA ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532
[7]  
HERMAN P, EUROPHYS C H, V9, P72
[8]   HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].
HOFMANN, KR ;
WERNER, C ;
WEBER, W ;
DORDA, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699
[9]   RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].
HSU, FC ;
TAM, S .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52
[10]   HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].
HU, CM ;
TAM, SC ;
HSU, FC ;
KO, PK ;
CHAN, TY ;
TERRILL, KW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385