OBSERVATION OF THE CHARACTERISTIC SURFACE-MORPHOLOGY OF IN1-XGAXP EPITAXIAL LAYERS WITH LARGE LATTICE MISMATCH TO THE GAP SUBSTRATE

被引：8
作者：
NISHIZAWA, J [1 ]
YOSHIDA, S [1 ]
KOIKE, M [1 ]
机构：
[1] SEMICOND RES INST,KAWAUCHI,SENDAI 980,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 02期
关键词：
D O I：
10.1016/0022-0248(86)90063-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：274 / 278
页数：5
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