GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS BY ION-IMPLANTATION

被引：27

作者：

WELCH, BM ^{[1
]}

EISEN, FH ^{[1
]}

HIGGINS, JA ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3685 / 3687

页数：3

共 13 条

[1]

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[2]

EISEN FH, 1973, 3 P INT ION IMPL C

[3] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[4] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[5]

Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[6] GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HUNSPERGER, RG ;

HIRSCH, N .

ELECTRONICS LETTERS, 1973, 9 (25) :577-578

[7]

PASHLEY RM, UNPUBLISHED

[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1958, 110 (06) :1254-1262

[9]

Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[10]

STERZER F, 1971, ELECTRON LETT, V7, P21

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