GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS BY ION-IMPLANTATION

被引：27
|
作者：
WELCH, BM [1 ]
EISEN, FH [1 ]
HIGGINS, JA [1 ]
机构：
[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期
关键词：
D O I：
10.1063/1.1663838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3685 / 3687
页数：3
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