OBSERVATION OF A VACUUM TUNNEL GAP IN A TRANSMISSION ELECTRON-MICROSCOPE USING A MICROMECHANICAL TUNNELING MICROSCOPE

被引:37
作者
LUTWYCHE, MI
WADA, Y
机构
[1] Advanced Research Laboratory, Hitachi, Ltd., Hatoyama
关键词
D O I
10.1063/1.113482
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports the observation of the vacuum tunnel gap between two conductors using a high resolution transmission electron microscope. A 2.5 mm square micromachined tunneling microscope chip has been fabricated with a minimum feature size of 0.4 μm. The chip fits into a modified side-entry type transmission electron microscope holder. The tunnel gap is controlled by a purpose-built feedback controller. The micromachines work reliably during observation of the tip apex in a transmission electron microscope, allowing the voltage and current to be changed while the tunnel gap is observed.© 1995 American Institute of Physics.
引用
收藏
页码:2807 / 2809
页数:3
相关论文
共 14 条
[1]   ELECTRON INTERFEROMETRY AT CRYSTAL-SURFACES [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :987-990
[2]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[3]   SCANNING-TUNNELING-MICROSCOPE TIP-INDUCED MIGRATION OF VACANCIES ON GAP(110) [J].
EBERT, P ;
LAGALLY, MG ;
URBAN, K .
PHYSICAL REVIEW LETTERS, 1993, 70 (10) :1437-1440
[4]   POSITIONING SINGLE ATOMS WITH A SCANNING TUNNELING MICROSCOPE [J].
EIGLER, DM ;
SCHWEIZER, EK .
NATURE, 1990, 344 (6266) :524-526
[5]   SURFACE MODIFICATION OF MOS2 USING AN STM [J].
HOSOKI, S ;
HOSAKA, S ;
HASEGAWA, T .
APPLIED SURFACE SCIENCE, 1992, 60-1 :643-647
[6]   FORMATION OF NANOMETER-SCALE GROOVES IN SILICON WITH A SCANNING TUNNELING MICROSCOPE [J].
KOBAYASHI, A ;
GREY, F ;
WILLIAMS, RS ;
AONO, M .
SCIENCE, 1993, 259 (5102) :1724-1726
[7]   NANOFABRICATION OF LAYERED MATERIALS WITH THE SCANNING TUNNELING MICROSCOPE [J].
KONDO, S ;
LUTWYCHE, M ;
WADA, Y .
APPLIED SURFACE SCIENCE, 1994, 75 :39-44
[8]   INVESTIGATION OF STM IMAGE ARTIFACTS BY INSITU REFLECTION ELECTRON-MICROSCOPY [J].
LO, WK ;
SPENCE, JCH .
ULTRAMICROSCOPY, 1993, 48 (04) :433-444
[9]  
LUTWYCHE MI, 1995, ACTUATORS A, V48
[10]  
LUTWYCHE MI, 1994, P SOLID STATE DEVICE, P34