HIGH-FIELD GALVANOMAGNETIC EFFECTS IN COMPENSATED NON-POLAR SEMICONDUCTORS

被引：12
作者：
BHATTACHARYA, DP
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 23卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.23.6668
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：6668 / 6675
页数：8
相关论文
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