ELECTRON TRAPS CREATED BY HIGH-TEMPERATURE ANNEALING IN MBE N-GAAS

被引：32
作者：
DAY, DS
OBERSTAR, JD
DRUMMOND, TJ
MORKOC, H
CHO, AY
STREETMAN, BG
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 03期
关键词：
D O I：
10.1007/BF02654584
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：445 / 453
页数：9
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