GROWTH OF CEO2 THIN-FILMS BY LASER ABLATION

被引：1

作者：

AMIRHAGHI, S ^{[1
]}

BEECH, F ^{[1
]}

VICKERS, M ^{[1
]}

BARNES, P ^{[1
]}

TARLING, S ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] UNIV LONDON BIRKBECK COLL,DEPT CRYSTALLOG,LONDON WC1E 7HX,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

THIN FILMS; LASER APPLICATIONS; SUPERCONDUCTORS;

D O I：

10.1049/el:19911427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of CeO2 have been grown in situ on silicon (111) and silicon (100) by laser ablation. Results from X-ray diffraction theta-2-theta scans indicate that both the substrate temperature and the oxygen partial pressure are crucial in promoting growth in the preferential [111] direction.

引用

页码：2304 / 2305

页数：2

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