GROWTH OF CEO2 THIN-FILMS BY LASER ABLATION

被引：1
|
作者：
AMIRHAGHI, S [1 ]
BEECH, F [1 ]
VICKERS, M [1 ]
BARNES, P [1 ]
TARLING, S [1 ]
BOYD, IW [1 ]
机构：
[1] UNIV LONDON BIRKBECK COLL,DEPT CRYSTALLOG,LONDON WC1E 7HX,ENGLAND
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
THIN FILMS; LASER APPLICATIONS; SUPERCONDUCTORS;
D O I：
10.1049/el:19911427
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of CeO2 have been grown in situ on silicon (111) and silicon (100) by laser ablation. Results from X-ray diffraction theta-2-theta scans indicate that both the substrate temperature and the oxygen partial pressure are crucial in promoting growth in the preferential [111] direction.
引用
收藏
页码：2304 / 2305
页数：2
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