MGO EPITAXIAL THIN-FILMS ON (100) GAAS AS A SUBSTRATE FOR THE GROWTH OF ORIENTED PBTIO3

被引：88
作者：
HSU, WY
RAJ, R
机构：
[1] Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期
关键词：
D O I：
10.1063/1.106766
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial MgO thin films were grown on (100) GaAs substrates by reactive rf magnetron sputtering. Coupled x-ray diffraction, off-axis phi-scan, and transmission electron microscopy indicated in-plane alignment of the MgO film with the GaAs substrate such that MgO[100] parallel-to GaAs[100]. PbTiO3 ferroelectric thin films, grown on this MgO surface, were found to be oriented with PbTiO3{100} parallel-to MgO (001) parallel-to GaAs (001) and PbTiO3 [100] parallel-to MgO[100] parallel-to GaAs[100].
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页码：3105 / 3107
页数：3
相关论文
共 19 条
[1]   ELECTROOPTIC EFFECTS OF (PB, LA)(ZR, TI)O3 THIN-FILMS PREPARED BY RF PLANAR MAGNETRON SPUTTERING [J].
ADACHI, H ;
KAWAGUCHI, T ;
SETSUNE, K ;
OHJI, K ;
WASA, K .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :867-868
[2]  
[Anonymous], 1985, HDB OPTICAL CONSTANT
[3]   EPITAXIAL MGO ON SI(001) FOR Y-BA-CU-O THIN-FILM GROWTH BY PULSED LASER DEPOSITION [J].
FORK, DK ;
PONCE, FA ;
TRAMONTANA, JC ;
GEBALLE, TH .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2294-2296
[4]   GROWTH OF EPITAXIAL PRO2 THIN-FILMS ON HYDROGEN TERMINATED SI (111) BY PULSED LASER DEPOSITION [J].
FORK, DK ;
FENNER, DB ;
GEBALLE, TH .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4316-4318
[5]   GROWTH OF BATIO3-SRTIO3 THIN-FILMS BY RF MAGNETRON SPUTTERING [J].
FUJIMOTO, K ;
KOBAYASHI, Y ;
KUBOTA, K .
THIN SOLID FILMS, 1989, 169 (02) :249-256
[6]   HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON [J].
FUKUMOTO, H ;
IMURA, T ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1989, 55 (04) :360-361
[7]  
HELLWEGE KH, 1981, NUMERICAL DATA FUNCT, V16
[8]  
HOWES MJ, 1985, GALLIUM ARSENIDE
[9]  
HSU WK, UNPUB
[10]   EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON [J].
INOUE, T ;
YAMAMOTO, Y ;
KOYAMA, S ;
SUZUKI, S ;
UEDA, Y .
APPLIED PHYSICS LETTERS, 1990, 56 (14) :1332-1333
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