A SMALL-SIGNAL MODEL FOR THE FREQUENCY-DEPENDENT DRAIN ADMITTANCE IN FLOATING-SUBSTRATE MOSFETS

被引：27
作者：
HOWES, R
REDMANWHITE, W
机构：
[1] Department of Electronics and Computer Science, University of Southampton, Southampton
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 08期
关键词：
Drain Admittance - Frequency Dependence - Small Signal Models;
D O I：
10.1109/4.148327
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper examines the frequency-dependent drain admittance of silicon-on-sapphire (SOS) MOSFET's from the perspective of the circuit designer. Measurements of small-signal drain characteristics as a function of frequency, bias conditions, and device geometry are presented, which have major implications for analog circuit design. These are explained in terms of a new small-signal circuit model. Physical explanations for the observations are given and the poles and zeros of the model identified to assist designers carrying out hand calculations with easily manipulated expressions. Frequency-dependent thermal effects are also discussed. Similar effects can be expected in other SOI technologies.
引用
收藏
页码：1186 / 1193
页数：8
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