INSITU MONITORING OF WAFER CHARGING DURING ION-IMPLANTATION

被引：4

作者：

BENVENISTE, V

FRIEDMAN, HE

MACK, ME

SINCLAIR, F

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90248-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：568 / 571

页数：4

相关论文

共 4 条

[1] BASRA VK, 1987, ION IMPLANTATION TEC, P360
[2] ION-BEAM INDUCED WAFER CHARGING
DOHERTY, BJ
MCCARRON, DJ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 559 - 562
[3] CHARGING AND CHARGE NEUTRALIZATION IN ION-IMPLANTATION
MACK, ME
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 472 - 477
[4] TONG R, 1985, ION IMPLANTATION EQU, P376