ROOM-TEMPERATURE SWITCHING AND NEGATIVE DIFFERENTIAL RESISTANCE IN THE HETEROSTRUCTURE HOT-ELECTRON DIODE

被引：25

作者：

HIGMAN, TK ^{[1
]}

MILLER, LM ^{[1
]}

FAVARO, ME ^{[1
]}

EMANUEL, MA ^{[1
]}

HESS, K ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,NSF ENGN RES CTR CPDS SEMICOND MICROELECTR,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1623 / 1625

页数：3

共 9 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] ELECTRON-TRANSPORT IN HETEROSTRUCTURE HOT-ELECTRON DIODES
ARNOLD, D
HESS, K
IAFRATE, GJ
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (05) : 373 - 375
[3] Coleman J. J., 1985, GALLIUM ARSENIDE TEC, P79
[4] NEW ULTRAFAST SWITCHING MECHANISM IN SEMICONDUCTOR HETEROSTRUCTURES
HESS, K
HIGMAN, TK
EMANUEL, MA
COLEMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3775 - 3777
[5] THEORETICAL AND EXPERIMENTAL-ANALYSIS OF THE SWITCHING MECHANISM IN HETEROSTRUCTURE HOT-ELECTRON DIODES
HIGMAN, TK
HIGMAN, JM
EMANUEL, MA
HESS, K
COLEMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1495 - 1499
[6] PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS
KUECH, TF
WOLFORD, DJ
VEUHOFF, E
DELINE, V
MOONEY, PM
POTEMSKI, R
BRADLEY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 632 - 643
[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[8] CIRCUIT CONTROLLED CURRENT INSTABILITIES IN S-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY ELEMENTS
SHAW, MP
GASTMAN, IJ
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (07) : 243 - &
[9] PERPENDICULAR TRANSPORT ACROSS (AL,GA) AS AND THE GAMMA-TRANSITION TO X-TRANSITION
SOLOMON, PM
WRIGHT, SL
LANZA, C
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (06) : 521 - 525

← 1 →