CHEMICAL ETCHING OF SILICON, GERMANIUM, GALLIUM-ARSENIDE, AND GALLIUM-PHOSPHIDE

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作者：

KERN, W

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RCA REVIEW | 1978年 / 39卷 / 02期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：278 / 308

页数：31

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