CURRENT SATURATION AND OSCILLATION IN CDSE

被引：8

作者：

YEE, S

KAWAI, A

NEUDORFER, ML

机构：

[1] Department of Electrical Engineering, University of Washington, Seattle, WA

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 03期

基金：

美国国家卫生研究院;

关键词：

D O I：

10.1016/0038-1101(69)90031-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current saturation and oscillations are observed in low resistivity CdSe single crystals without any external illumination over the temperature range from room temperature to 77°K. These observations are explained qualitatively by a phenomenological theory which is developed on the basis of the acoustoelectric effect in piezoelectric materials. A sound velocity of 1.8-2.0×105 cm/sec is deduced from the current oscillations. A shallow donor level located at 0.012 eV below the conduction band is found from the low field Hall measurements of carrier concentration as a function of temperature. © 1969.

引用

页码：191 / +

页数：1

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[1]

BRAY R, 1966, P INT C PHYS SEMICON, V21, P483

[2]

CHEMERES.GG, 1967, FIZ TVERD TELA+, V8, P2306

[3] NEW HOT-ELECTRON NEGATIVE RESISTANCE EFFECT [J].