STRIPE-GEOMETRY LASER WITH INSITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR-BEAM EPITAXY

被引：3
作者：
TSANG, WT
LOGAN, RA
DITZENBERGER, JA
机构：
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 03期
关键词：
D O I：
10.1049/el:19820082
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：123 / 124
页数：2
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