RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS

被引：335
作者：
SMITH, JE
BRODSKY, MH
CROWDER, BL
NATHAN, MI
PINCZUK, A
机构：
来源：
PHYSICAL REVIEW LETTERS | 1971年 / 26卷 / 11期
关键词：
D O I：
10.1103/PhysRevLett.26.642
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：642 / &
相关论文
共 24 条
[1]  
ANGRESS JF, 1964, 7 P INT C PHYS SEM P, P1116
[2]   SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J].
BALKANSKI, M ;
NAZAREWICZ, W .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) :573-&
[3]  
BESERMAN R, 1970, P INT C THIN FILMS C
[4]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[5]  
CHANG J, 1970, 7 P INT C EL MICR, V2, P183
[6]  
Chittick R. C., 1970, J NON-CRYST SOLIDS, V3, P255
[7]   ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].
CROWDER, BL ;
TITLE, RS ;
BRODSKY, MH ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&
[8]   THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J].
DOLLING, G ;
COWLEY, RA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P) :463-+
[9]   RAMAN AND VIBRONIC SPECTRA OF NITRITE ION IN ALKALI HALIDES [J].
EVANS, AR ;
FITCHEN, DB .
PHYSICAL REVIEW B, 1970, 2 (04) :1074-&
[10]   INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134
123