GROWTH OF GAN AND ALGAN FOR UV BLUE P-N-JUNCTION DIODES

被引：84

作者：

AKASAKI, I ^{[1
]}

AMANO, H ^{[1
]}

MURAKAMI, H ^{[1
]}

SASSA, M ^{[1
]}

KATO, H ^{[1
]}

MANABE, K ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD,HARUHI,AICHI 452,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90352-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reviews the recent progress of the technique and understanding of the mechanism for heteroepitaxial growth of nitride films on highly mismatched substrate (HGHMS) which was mainly developed by us. Mechanism of the HGHMS revealed by electron microscopy observation and application of the newly developed HGHMS to the fabrication of short wavelength, especially blue and UV light emitting diode are discussed.

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页码：379 / 383

页数：5

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