JUNCTION PROPERTIES AND GAP STATES IN NB-DOPED TIO2 THIN-FILMS

被引：10

作者：

OKAMURA, T ^{[1
]}

OKUSHI, H ^{[1
]}

机构：

[1] KYOCERA CORP,CENT RES LAB,KOKUBU,KAGOSHIMA 89943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

TIO2; THIN FILM; SOL-GEL; SEMICONDUCTOR; HETEROJUNCTION; ICTS; C-V; IV; NB; DOPANT;

D O I：

10.1143/JJAP.32.L454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nb-doped TiO2 thin films were successfully prepared on p-type crystalline Si substrates using the sol-gel process. The current-voltage (I-V) characteristics of the heterojunctions between TiO2 and Si show a rectification and the capacitance-voltage (C-V) characteristics an approximate linear C-2-V relationship in the reverse-bias condition. By application of an isothermal capacitance transient spectroscopy (ICTS) method on these junction diodes, it is found that two gap states are located at 0.027 eV and 0.22 eV below the conduction band edge (E(c)).

引用

页码：L454 / L457

页数：4

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