INFLUENCE OF GROWTH-CONDITIONS ON THE PHOTOLUMINESCENCE OF PSEUDOMORPHIC MBE GROWN SI1-XGEX QUANTUM-WELLS

被引：8

作者：

BRUNNER, J

MENCZIGAR, U

GAIL, M

FRIESS, E

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Am Coulombwall

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90657-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of growth conditions on the photoluminescence of SiGe quantum wells is presented. Growth temperatures above 600-degrees-C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 angstrom/s, however, has no significant effect on the spectra. With optimized growth conditions, strong excitonic dominated quantum well luminescence with line widths below 5 meV has been achieved.

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页码：443 / 446

页数：4

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