SECONDARY-ELECTRON FIELD-EMISSION

被引：10

作者：

FITTING, HJ

HECHT, D

机构：

[1] Wilhelm-Pieck-Univ Rostock, Rostock, East Ger, Wilhelm-Pieck-Univ Rostock, Rostock, East Ger

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 108卷 / 01期

关键词：

FILMS; -; Dielectric; SPECTROSCOPY; ELECTRON;

D O I：

10.1002/pssa.2211080127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Secondary electron field emission (SEFE) is based on Fowler-Nordheim tunneling from conducting substrates into thin insulating layers due to their strongly positive charging-up during electron bombardment. This self-consistent charging-up process is demonstrated by a computer simulation. Thereby the FN-injection current from the substrate is extremely field-sensitive, allowing a detection of less than 10**1**0 elementary charges per cm**2 inside the top dielectric layer. Based on this high sensitivity an electron and hole trap spectroscopy by electron beam injection and thermal simulation in thin insulating layers (d less than 150 nm) is set up.

引用

页码：265 / 273

页数：9

共 17 条

[1]

BRONSHTEIN JM, 1969, SECONDARY ELECTRON E

[2]

DEKKER AJ, 1958, SOLID STATE PHYS, V6, P251

[3]

Fitting H.-J., 1979, Experimentelle Technik der Physik, V27, P13

[4] MONTE-CARLO APPROACH OF ELECTRON-EMISSION FROM SIO2 [J].

FITTING, HJ ;

BOYDE, J ;

REINHARDT, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :323-332

[5]

FITTING HJ, 1983, PHYS HALBLEITEROBERF, V14, P183

[6]

FITTING HJ, 1985, Patent No. 224941

[7]

FITTING HJ, 1984, Patent No. 214690

[8]

FITTING HJ, 1984, PHYS HALBLEITEROBERF, V15, P277

[9]

FRANKE M, 1977, THESIS ROSTOCK

[10] ELECTRONS IN LATTICE FIELDS [J].

FROHLICH, H .

ADVANCES IN PHYSICS, 1954, 3 (11) :325-&

← 1 2 →