VAPOR-PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERS

被引：27

作者：

VOHL, P

WOLFE, CM

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 05期

关键词：

D O I：

10.1007/BF02655441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：659 / 678

页数：20

共 19 条

[1] CDTE-HGTE HETEROSTRUCTURES [J].

ALMASI, GS ;

SMITH, AC .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) :233-&

[2] GROWTH AND PROPERTIES OF CDXHG1-XTE CRYSTALS [J].

BARTLETT, BE ;

DEANS, J ;

ELLEN, PC .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :266-&

[3]

BLAIR J, 1960, METALLURGY ELEMENTAL, P393

[4] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) :989-&

[5] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C) [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1441-&

[6]

CARPENTER DC, N0001968C0181 CONTR

[7]

CARPENTER DC, N0001970C0289 CONTR

[8]

COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[9]

HARMAN TC, 1967, PHYSICS CHEM 2 6 COM, P767

[10] PREPARATION AND PROPERTIES OF HGTE AND MIXED CRYSTALS OF HGTE-CDTE [J].

LAWSON, WD ;

NIELSEN, S ;

PUTLEY, EH ;

YOUNG, AS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :325-329

← 1 2 →