THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR AND SELENIUM INCORPORATION IN GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：2
作者：
ANDREWS, DA
HECKINGBOTTOM, R
DAVIES, GJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期
关键词：
D O I：
10.1063/1.337389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1009 / 1014
页数：6
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[1]   THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDREWS, DA ;
HECKINGBOTTOM, R ;
DAVIES, GJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425
[2]   THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDREWS, DA ;
KONG, MY ;
HECKINGBOTTOM, R ;
DAVIES, GJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :841-845
[3]   SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE [J].
COLLINS, DM ;
MILLER, JN ;
CHAI, YG ;
CHOW, R .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3010-3018
[4]   USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
COLLINS, DM .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :67-70
[5]   ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
ANDREWS, DA ;
HECKINGBOTTOM, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7214-7218
[6]   THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].
HECKINGBOTTOM, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575
[7]   INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J].
HECKINGBOTTOM, R ;
TODD, CJ ;
DAVIES, GJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :444-450
[8]  
JIANG DS, 1982, J APPL PHYS, V53, P999, DOI 10.1063/1.330581
[9]  
KERR TM, 1985, 3RD EUR WORKSH MBE A
[10]  
Kubaschewski O., 1979, METALLURGICAL THERMO
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