DETERMINATION OF BAND-GAP NARROWING AND HOLE DENSITY FOR HEAVILY C-DOPED GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY

被引：48

作者：

LU, ZH ^{[1
]}

HANNA, MC ^{[1
]}

MAJERFELD, A ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,BOULDER,CO 80309

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.110877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy band gap narrowing effect in heavily C-doped GaAs was investigated using photoluminescence spectroscopy. The band gap was determined over the hole density range 10(17) - 4 x 10(20) cm-3 at 10 and 300 K. The band gap data at low temperatures confirm the available theoretical calculations up to 10(20) cm-3. An unexpected temperature dependence of the observed band gap at high doping levels is discussed on the basis of carrier-phonon interactions. We present an analysis of the band gap narrowing effect that can be used for nondestructive measurement of hole densities in the range 10(17) - 4 x 10(20) CM-3.

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页码：88 / 90

页数：3

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