LIGHT-INDUCED ANNEALING OF PHOTOCREATED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON

被引：2
作者：
ZHANG, Q
NISHINO, T
KUMEDA, M
SHIMIZU, T
机构：
[1] Kanazawa University, Kanazawa
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4B期
关键词：
HYDROGENATED AMORPHOUS SILICON; STABILITY; PHOTOCREATED DANGLING BOND; DEFECT POOL; LIGHT-INDUCED ANNEALING; ANNEALING ACTIVATION ENERGY DISTRIBUTION;
D O I：
10.1143/JJAP.34.L483
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-induced annealing (LIA) of photocreated dangling bonds in hydrogenated amorphous silicon has been well comfirmed, but the mechanism for the LIA. is still disputed. In order to distinguish the LIA from thermal annealing, we investigate the effect of the LIA on the distribution of thermal annealing activation energies for photocreated dangling bonds. We find that the LIA mainly annihilates the photocreated dangling bonds with a smaller thermal annealing activation energy. Taking this result into account, we discuss the models proposed for the LIA.
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页码：L483 / L486
页数：4
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