IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS

被引：35

作者：

GOTO, G ^{[1
]}

YANAGISAWA, S ^{[1
]}

WADA, O ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, KAMIKODANAKA, KAWASAKI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 07期

关键词：

D O I：

10.1143/JJAP.13.1127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1127 / 1133

页数：7

共 15 条

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