The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy

被引：0

作者：

Haasch, Richard T. ^{[1
]}

Patscheider, Jorg ^{[1
,2
]}

Hellgren, Niklas ^{[1
,3
]}

Petrov, Ivan ^{[1
]}

Greene, J. E. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci, Frederick Seitz Mat Res Lab, 104 S Goodwin Ave, Urbana, IL 61801 USA

[2] EMPA, Lab Nano scale Mat Sci, CH-8600 Dubendorf, Switzerland

[3] Messiah Coll, Dept Math Sci, Grantham, PA USA

来源：

SURFACE SCIENCE SPECTRA | 2012年 / 19卷 / 01期

关键词：

titanium nitride; titanium; magnetron sputtering; hard coating; transition metal nitride;

D O I：

10.1116/11.20121007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray photoelectron spectroscopy (XPS) was used to analyze Ti/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition on MgO(001), with an electrically floating substrate potential of 7 V, in mixed 1: 1 Ar/N-2 discharges maintained at a total pressure of 0.5 Pa (3.75 x 10(-3) Torr). The TiN(001) films were grown at 600 degrees C and the 4-ML- thick Ti overlayers at room temperature. XPS spectra were obtained using incident monochromatic Al K-a x-radiation at 0.83401 nm. Ti/TiN(001) Ti 2p spectra reveal reduced unscreened final-state satellite peaks compared to Ti 2p spectra obtained from uncapped TiN(001) due to increased electronic screening. (C) 2012 American Vacuum Society.

引用

页码：92 / 97

页数：6

共 7 条

[1]

Fairley N., 2005, CASA COOKBOOK 1, P147

[2] New approach in the monitoring and characterization of titanium nitride thin films [J].

Logothetidis, S ;

Meletis, EI ;

Kourouklis, G .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (02) :436-441

[3] Electronic structure of the SiNx/TiN interface: A model system for superhard nanocomposites [J].

Patscheider, Joerg ;

Hellgren, Niklas ;

Haasch, Richard T. ;

Petrov, Ivan ;

Greene, J. E. .

PHYSICAL REVIEW B, 2011, 83 (12)

[4] HETEROEPITAXIAL WURTZITE AND ZINCBLENDE STRUCTURE GAN GROWN BY REACTIVE-ION MOLECULAR-BEAM EPITAXY - GROWTH-KINETICS, MICROSTRUCTURE, AND PROPERTIES [J].

POWELL, RC ;

LEE, NE ;

KIM, YW ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :189-204

[5] Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67≤x<1.0) layers on MgO(001) [J].

Shin, CS ;

Rudenja, S ;

Gall, D ;

Hellgren, N ;

Lee, TY ;

Petrov, I ;

Greene, JE .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) :356-362

[6] HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTRUM OF VALENCE BANDS OF GOLD [J].

SHIRLEY, DA .

PHYSICAL REVIEW B, 1972, 5 (12) :4709-&

[7] DECONVOLUTION AND SMOOTHING - APPLICATIONS IN ESCA [J].

WERTHEIM, GK .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1975, 6 (03) :239-251

← 1 →