LOW-ENERGY ELECTRON-IRRADIATION OF SI-SIO2 INTERFACE

被引：18

作者：

PEPPER, M ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

THIN SOLID FILMS | 1972年 / 14卷 / 01期

关键词：

D O I：

10.1016/0040-6090(72)90382-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S7 / S10

页数：4

共 9 条

[1]

BALK P, 1965, BUFFALO M ELECTROCHE

[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[3] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[4]

Mott N. F., 1940, ELECTRONIC PROCESSES

[5] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[6] KINETICS AND MECHANISM OF THERMAL OXIDATION OF SILICON WITH SPECIAL EMPHASIS ON IMPURITY EFFECTS [J].

REVESZ, AG ;

EVANS, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :551-+

[7]

REVESZ AG, 1968, RCA REV, V29, P22

[8] NONCRYSTALLINE STRUCTURE AND ELECTRONIC CONDUCTION OF SILICON DIOXIDE FILMS [J].

REVESZ, AG .

PHYSICA STATUS SOLIDI, 1967, 24 (01) :115-+

[9]

REVESZ AG, 1971, IEEE T NUCL SCI, VNS18, P113

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