PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELL STRUCTURES

被引：20
作者：
TERASHIMA, K [1 ]
TAJIMA, M [1 ]
IKARASHI, N [1 ]
NIINO, T [1 ]
TATSUMI, T [1 ]
机构：
[1] INST SPACE & ASTRONAUT SCI,SAGAMIHARA 229,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
PHOTOLUMINESCENCE; SILICON-GERMANIUM; QUANTUM WELL; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;
D O I：
10.1143/JJAP.30.3601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) spectra of Si1-xGex/Si multiple quantum wells (MQW) grown by molecular beam epitaxy (MBE) have been investigated. Strong emission bands appear for all the as-grown samples. The PL intensity is increased by a factor of 5-10 after the annealing at 600-700-degrees-C. The annealing at 800-degrees-C results in the disappearance of the strong emission bands. The dependence of the PL intensity on the excitation power density indicates that some recombination center is involved in the strong emission. Annealing effects of the PL spectra can be explained as the behavior of this recombination center under the heat treatments. Transmission electron microscopy (TEM) observations show that the quality of the quantum well structures is related to the observed PL characteristics. The intense PL may be due to the two-dimensional carrier confinement.
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页码：3601 / 3605
页数：5
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