ELECTRONIC-STRUCTURE AND ITS DEPENDENCE ON LOCAL ORDER FOR H/SI(111)-(1X1) SURFACES

被引：149

作者：

HRICOVINI, K

GUNTHER, R

THIRY, P

TALEBIBRAHIMI, A

INDLEKOFER, G

BONNET, JE

DUMAS, P

PETROFF, Y

BLASE, X

ZHU, XJ

LOUIE, SG

CHABAL, YJ

THIRY, PA

机构：

[1] CNRS,SPECTROSCOPIE INFRAROUGE & RAMAN LAB,F-94320 THIAIS,FRANCE

[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[3] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[4] AT&T BELL LABS,MURRAY HILL,NJ 07974

[5] FAC UNIV NOTRE DAME PAIX,INTERDISCIPLINAIRE SPECT ELECTR LAB,B-5000 NAMUR,BELGIUM

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.70.1992

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The valence and core level spectra of chemically prepared, ideally H-terminated Si(111) surfaces are characterized by remarkably sharp features. The valence band levels and their dispersion are well described by first-principles calculations using a quasiparticle self-energy approach within the GW approximation. From the Si2p spectra, an upper limit of 35 +/- 10 meV is derived for the core hole lifetime broadening, a value substantially lower than previously measured.

引用

页码：1992 / 1995

页数：4

共 38 条

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