HOLE VELOCITY IN P-GAAS

[1] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &

[2] AVALANCHE MULTIPLICATION IN BULK N-SI [J]. APPLIED PHYSICS LETTERS, 1969, 15 (11) : 379 - &

[3] TRANSIENT DOUBLE INJECTION IN TRAP-FREE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 585 - &

[4] DUH VY, 1967, IEEE T ELECTRON DEV, VED14, P46

[5] HIGH-POWER AND HIGH-EFFICIENCY GAAS AVALANCHE DIODES [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 270 - &

[6] KIM CK, 1969, IEEE T ELECTRON DEVI, VED16, P917

[7] ULTRALOW NOISE IN PULSED GAAS AVALANCHE DIODE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (03): : 494 - &

[8] DEPENDENCE OF HOLE VELOCITY UPON ELECTRIC FIELD AND HOLE DENSITY FOR P-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2563 - +

[1] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &

[2] AVALANCHE MULTIPLICATION IN BULK N-SI [J]. APPLIED PHYSICS LETTERS, 1969, 15 (11) : 379 - &

[3] TRANSIENT DOUBLE INJECTION IN TRAP-FREE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 585 - &

[4] DUH VY, 1967, IEEE T ELECTRON DEV, VED14, P46

[5] HIGH-POWER AND HIGH-EFFICIENCY GAAS AVALANCHE DIODES [J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 270 - &

[6] KIM CK, 1969, IEEE T ELECTRON DEVI, VED16, P917

[7] ULTRALOW NOISE IN PULSED GAAS AVALANCHE DIODE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (03): : 494 - &

[8] DEPENDENCE OF HOLE VELOCITY UPON ELECTRIC FIELD AND HOLE DENSITY FOR P-TYPE SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2563 - +