INFLUENCE OF NITROGEN INCORPORATION IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引：4

作者：

HIRAMATSU, M

KAMIMURA, T

NAKAJIMA, M

ITO, H

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, Komukai Toshiba-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1A期

关键词：

PHOTOCHEMICAL VAPOR DEPOSITION; INFLUENCE OF NITROGEN; DARK CONDUCTIVITY; PHOTOCONDUCTIVITY; HYDROGEN CONTENT; OPTICAL BAND GAP;

D O I：

10.1143/JJAP.30.L7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of nitrogen incorporation in a-Si:H films by mercury-photosensitized decomposition of a silane-ammonia gas mixture was investigated. It was found that there are two different film structures of a-Si:H films. In a high nitrogen concentration, nitrogen is one of the elements of the a-Si-N(x) alloy. On the other hand, in a low nitrogen concentration, nitrogen plays the role of a dopant in a-Si-H, and nitrogen-induced localized states are created at around 0.5 eV above the valence band edge.

引用

页码：L7 / L10

页数：4

共 8 条

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