AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS

被引：59

作者：

BISARO, R

LAURENCIN, G

FRIEDERICH, A

RAZEGHI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 11期

关键词：

D O I：

10.1063/1.92974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：978 / 980

页数：3

共 8 条

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[2]

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[6]

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[7] DEVELOPMENT OF SURFACE-TOPOGRAPHY DURING DEPTH PROFILING IN AUGER-ELECTRON SPECTROSCOPY [J].

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[8] DEPTH RESOLUTION DEGRADATION OF SPUTTER-PROFILED INP-INXGA1-XASYP1-Y INTERFACES CAUSED BY CONE FORMATION [J].

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