CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS

被引：75
作者：
LOGAN, RA
CHYNOWETH, AG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 05期
关键词：
D O I：
10.1063/1.1728804
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1649 / &
相关论文
共 15 条
[1]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS [J].
CHYNOWETH, AG ;
GUMMEL, HK .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) :191-&
[2]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[3]   THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 108 (01) :29-34
[4]   UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J].
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1161-1165
[5]   IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].
CHYNOWETH, AG .
PHYSICAL REVIEW, 1958, 109 (05) :1537-1540
[6]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[7]   ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&
[8]   THE FORWARD CHARACTERISTIC OF THE PIN DIODE [J].
KLEINMAN, DA .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :685-706
[9]  
LEE CA, TO BE PUBLISHED
[10]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
12