ANNEALING PHENOMENA IN ION-IMPLANTED BUBBLE CIRCUITS

被引：5

作者：

JOUVE, H

GERARD, P

LUC, A

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1980年 / 16卷 / 05期

关键词：

D O I：

10.1109/TMAG.1980.1060809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：946 / 948

页数：3

共 10 条

[1] EFFECTS OF ANNEALING ON PROPAGATION IN ION-IMPLANTED CONTIGUOUS-DISK BUBBLE-DEVICES [J].

AHN, KY ;

KEEFE, GE .

IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (06) :1657-1657

[2]

DAVIES JE, 1977, IBM J RES DEV NOV, P522

[3] SPECIFIC PROPERTIES OF ION-IMPLANTED BUBBLE CIRCUITS [J].

JOUVE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :2246-2251

[4] SOME CHARACTERISTICS OF ION-IMPLANTED BUBBLE CHIPS [J].

JOUVE, H ;

PULCHASKA, IB .

IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (03) :1016-1020

[5]

KOMENOU K, 1978, J APPL PHYS, V49, P5816, DOI 10.1063/1.324597

[6]

LIN YS, 1977, IEEE T MAGN, V13, P1744

[7]

VELLACOLEIRO GP, 1979, MAR INT C MAGN BUBBL

[8]

WASHBURN HA, 1979, J APPL PHYS, V50

[9] FERROMAGNETIC-RESONANCE STUDY OF THE ANISOTROPY PROFILE IN IMPLANTED BUBBLE GARNETS [J].

WILTS, CH ;

ZEBROWSKI, J ;

KOMENOU, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5878-5884

[10] SUPPRESSION OF HARD BUBBLES IN MAGNETIC GARNET FILMS BY ION-IMPLANTATION - DEPENDENCE ON ION SPECIES, DOSE, ENERGY, AND ANNEALING [J].

WOLFE, R ;

NORTH, JC ;

LAI, YP .

APPLIED PHYSICS LETTERS, 1973, 22 (12) :683-685

← 1 →